CLY5_15 Datasheet, PDF (1/9 Pages) TriQuint Semiconductor – High Power GaAs

Applications
• Test and Measurement Equipment
• Defense Communications
• General Purpose Wireless
Product Features
• 400 – 2500 MHz Operating Range
• Wide Operating Voltage Range: +2.7 V to +6 V
• POUT=+26.5 dBm at VD=+3 V, f=1.8 GHz
• High Efficiency: >55 %
CLY5
High Power GaAs FET
4 Pin SOT-223 Package
Functional Block Diagram
Source
4
1
2
3
Gate Source Drain
General Description
The CLY5 is a high-breakdown voltage GaAs FET
designed for power amplifier applications in the 400 MHz
to 2.5 GHz frequency range. Excellent linearity and
easy impedance matching make this device an ideal
choice for portable PA applications in mobile phones and
WLAN transceivers. The CLY5 provides +26.5 dBm
output power, with an associated gain of 9.5 dB, at 1.8
GHz and VDS=+3 V. Power added efficiencies to 55%
are achievable.
The CLY5 is housed in an industry-standard lead-
free / green / RoHS-compliant SOT-223 package.
Pin Configuration
Pin No.
1
2, 4
3
Label
Gate
Source
Drain
Datasheet: Rev G 08-29-14
© 2014 TriQuint
Ordering Information
Part No.
Description
CLY5
High Power GaAs FET
Standard T/R size = 1000 pieces on a 13” reel.
- 1 of 9 -
Disclaimer: Subject to change without notice
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