T1G6003028-FS_15 Datasheet, PDF(4/13 Page) TriQuint Semiconductor – 30W, 28V, DC 6 GHz, GaN RF Power Transistor

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T1G6003028-FS_15 Datasheet, PDF (4/13 Pages) TriQuint Semiconductor – 30W, 28V, DC 6 GHz, GaN RF Power Transistor

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T1G6003028-FS

30W, 28V, DC â 6 GHz, GaN RF Power Transistor

Load Pull Smith Chart

RF performance that the device typically exhibits when placed in the specified impedance environment. The

impedances are not the impedances of the device, they are the impedances presented to the device via an

RF circuit or load-pull system. The impedances listed follow an optimized trajectory to maintain high power

and high efficiency.

Test Conditions: VDS = 28 V, IDQ = 200 mA Test Signal: Pulse Width = 100 Âµsec, Duty Cycle = 20%

Load-Pull Data at 3 GHz

Load-Pull Data at 4 GHz

Load-Pull Data at 5 GHz

Load-Pull Data at 6 GHz

Data Sheet: Rev B 09/12/2012

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Disclaimer: Subject to change without notice

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