T1G6003028-FS_15 Datasheet, PDF (1/13 Pages) TriQuint Semiconductor – 30W, 28V, DC 6 GHz, GaN RF Power Transistor

T1G6003028-FS
30W, 28V, DC – 6 GHz, GaN RF Power Transistor
Applications
• Military radar
• Civilian radar
• Professional and military radio
communications
• Test instrumentation
• Wideband or narrowband amplifiers
• Jammers
Product Features
• Frequency: DC to 6 GHz
• Output Power (P3dB): 30 W at 6 GHz
• Linear Gain: >14 dB at 6 GHz
• Operating Voltage: 28 V
• Low thermal resistance package
Functional Block Diagram
1
2
General Description
The TriQuint T1G6003028-FS is a 30 W (P_3dB)
discrete GaN on SiC HEMT which operates
from DC to 6 GHz. The device is constructed
with TriQuint’s proven 0.25 µm process, which
features advanced field plate techniques to
optimize power and efficiency at high drain
bias operating conditions. This optimization
can potentially lower system costs in terms of
fewer amplifier line-ups and lower thermal
management costs.
Lead-free and RoHS compliant
Evaluation Boards are available upon request.
Pin Configuration
Pin #
1
2
Flange
Symbol
Vd/RF OUT
Vg/RF IN
Source
Ordering Information
Material No. Part No.
1080206
T1G6003028-FS
1093989
T1G6003028-FS-
EVB1
Description
Packaged part:
Flangeless
5.4-5.9 GHz
Eval. Board
ECCN
EAR99
EAR99
Data Sheet: Rev B 09/12/2012
© 2012 TriQuint Semiconductor, Inc.
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Disclaimer: Subject to change without notice
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