QPA1011 Datasheet, PDF (4/25 Pages) TriQuint Semiconductor – 25 W GaN Power Amplifier

QPA1011
7.9 – 11.0 GHz 25 W GaN Power Amplifier
Performance Plots – Large Signal (Pulsed)
4000 ^{Drain Current. vs. Frequency vs. VD}
3500
3000
2500
2000
18 V 20 V 22 V 24 V 26 V 28 V
1500
1000
500
7.5
P_IN = 25 dBm, I_DQ = 1200 mA, Temp. = 25 °C
Pulsed V_D : PW = 100 µS, DC = 10%
8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5
Frequency (GHz)
1.6 ^{Gate Current. vs. Frequency vs. VD}
1.4
P_IN = 25 dBm, I_DQ = 1200 mA, Temp. = 25 °C
1.2
Pulsed V_D : PW = 100 µS, DC = 10%
1.0
0.8
0.6
0.4
0.2
0.0
-0.2
18 V 20 V 22 V 24 V 26 V 28 V
-0.4 _{7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5}
Frequency (GHz)
47
Output Power vs. Frequency vs. I_DQ
P_IN = 25 dBm, V_D = 24 V, Temp. = 25 °C
46
45
44
43
600 mA
1200 mA
42
Pulsed V_D : PW = 100 µS, DC = 10%
41
7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5
Frequency (GHz)
50 ^{Power Added Eff. vs. Frequency vs. IDQ}
P_IN = 25 dBm, V_D = 24 V, Temp. = 25 °C
45
40
35
30
600 mA
1200 mA
25
Pulsed V_D : PW = 100 µS, DC = 10%
20
7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5
Frequency (GHz)
4500 ^{Drain Current. vs. Frequency vs. IDQ}
4000
P_IN = 25 dBm, V_D = 24 V, Temp. = 25 °C
3500
3000
2500
2000
600 mA
1200 mA
1500
Pulsed V_D : PW = 100 µS, DC = 10%
1000
7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5
Frequency (GHz)
1.0 ^{Gate Current. vs. Frequency vs. IDQ}
P_IN = 25 dBm, V_D = 24 V, Temp. = 25 °C
0.8
Pulsed V_D : PW = 100 µS, DC = 10%
0.6
0.4
0.2
0.0
600 mA 1200 mA
-0.2
7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5
Frequency (GHz)
Data Sheet Rev. C, March 10, 2017 | Subject to change without notice
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