QPA1011 Datasheet, PDF (1/25 Pages) TriQuint Semiconductor – 25 W GaN Power Amplifier

QPA1011
7.9 – 11.0 GHz 25 W GaN Power Amplifier
Product Description
Qorvo’s QPA1011 is a X-band high power MMIC amplifier
fabricated on Qorvo’s production 0.15um GaN on SiC
process (QGaN15). The QPA1011 operates from 7.9 – 11
GHz and typically provides 25 W saturated output power
with power-added efficiency of 37.5% and large-signal gain
of 19.5 dB. This combination of wideband performance
provides the flexibility designers are looking for to improve
system performance while reducing size and cost.
QPA1011 can also support a variety of operating conditions
to best support system requirements. With good thermal
properties, it can support a range of bias voltages and will
perform well under both CW and pulse operations.
The QPA1011 is matched to 50Ω with integrated DC
blocking capacitors on both RF I/O ports simplifying system
integration. The wideband performance and operational
flexibility allows it support satellite communication and data
links, as well as, military and commercial radar systems.
Lead-free and RoHS compliant.
Evaluation boards are available upon request.
Product Features
• Frequency Range: 7.9 – 11 GHz
• POUT: 44.5 dBm at PIN = 25 dBm
• PAE: 37.5 % at PIN = 25 dBm
• Large Signal Gain: 19.5 dB at PIN = 25 dBm
• Small Signal Gain: 26 dB
• Integrated Power Detector
• Bias: VD = 24 V, IDQ = 1200 mA, VG = −1.9 V Typical
• Pulsed VD: PW =100 µS, DC = 10%
• Package Dimensions: 4.5 x 5.0 x 1.72 mm
Functional Block Diagram
Performance is typical across frequency. Please
reference electrical specification table and data plots for
more details.
Applications
• Satellite Communications
• Data Links
• Military and Commercial Radar
Data Sheet Rev. C, March 10, 2017 | Subject to change without notice
Ordering Information
Part No. ECCN Description
QPA1011
3A001.b.2.b.2
7.9 – 11 GHz 25 W GaN Power
Amplifier
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