AP562_15 Datasheet, PDF (4/8 Pages) TriQuint Semiconductor – 3.3-3.8 GHz WiMAX 8W Power Amplifier

AP562
3.3-3.8 GHz WiMAX 8W Power Amplifier
3.4-3.6 GHz Application Circuit (AP562-PCB3500)
Typical O-FDMA Performance at 25°C
Frequency (GHz) 3.4 3.5 3.6 Units
Channel Power
+30 +30 +30 dBm
Power Gain
11.5 11.5 11.3 dB
Input Return Loss 11 15 15 dB
Output Return Loss 5.6 6.7 5.9 dB
EVM
2.2 1.9 1.7 %
Operating Current, Icc 720 685 670 mA
Collector Efficiency 11.1 11.7 12.2 %
Output P1dB
39.5 39.4 38.7 dBm
Quiescent Current, Icq
400
mA
Vpd
+5
V
Vcc
+12
V
C12
C21
R3
C13
D2
C14
R2
C15
C6
C16
C7
C17
C10
C18
C8
C11
C1
C22
C20
L3
Notes:
The primary RF microstrip line is 50 Ω.
Components shown on the silkscreen but not on the schematic are not used.
1. The edge of C23 is placed at 43mil from AP562 RFout pin.
2. The edge of C24 is placed right next to C23.
3. The edge of C22 is placed at 95mil from AP562 RFin pin.
4. The edge of L3 is placed right next to C22.
3.4-3.6 GHz Application Circuit Performance Plots
802.16-2004 O-FDMA, 64QAM-1/2, 1024-FFT, 20 symbols and 30 subchannels. 9.5 dB PAR @ 0.01%, 5 MHz Carrier BW
Gain vs. Frequency
12
T=25°C
11
10
9
8
7
3
3.2
3.4
3.6
3.8
4
Frequency (GHz)
Efficiency vs Output Average Power vs. Frequency
20
T=25°C
Return Loss
0
T=25°C
-5
-10
-15
-20
-25
3
3.2
3.4
3.6
Frequency (GHz)
S11 S22
3.8
4
EVM vs. Output Average Power vs. Frequency
5
T=25°C
Current vs Output Average Power vs. Frequency
T=25°C
800
750
700
650
600
550
500
450
3.4 GHz 3.5 GHz 3.6 GHz
400
20
22
24
26
28
30
32
Output Power (dBm)
Power Gain vs Temperature
Pout = 30 dBm
13
4
15
12
3
10
2
11
5
1
3.4 GHz 3.5 GHz 3.6 GHz
3.4 GHz 3.5 GHz 3.6 GHz
3.4 GHz 3.5 GHz 3.6 GHz
0
0
10
20
22
24
26
28
30
32
20
22
24
26
28
30
32
-50 -30 -10 10 30 50 70 90
Output Power (dBm)
Output Power (dBm)
Temperature (°C )
Specifications and information are subject to change without notice
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Page 4 of 8 May 2009