TQP3M9008_15 Datasheet, PDF (3/10 Pages) TriQuint Semiconductor – High Linearity LNA Gain Block

TQP3M9008
High Linearity LNA Gain Block
S-Parameters
Test Conditions: VDD = +5 V, IDD = 85 mA, Temp. = +25 °C, 50 Ω system, calibrated to device leads
Freq (MHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang)
50
-12.5
-170.0
23.6
172.9
-26.7
0.6
100
-11.9
-175.1
23.5
167.7
-26.7
-1.9
200
-11.4
178.0
23.1
159.5
-26.6
-5.5
400
-11.4
167.0
22.7
144.1
-26.7
-12.9
600
-11.6
154.1
22.3
129.4
-26.7
-19.6
800
-11.8
147.2
22.0
114.6
-26.7
-26.1
1000
-12.3
139.1
21.7
99.5
-26.8
-33.4
1200
-12.7
132.1
21.4
85.6
-26.9
-39.9
1400
-13.3
126.3
21.0
71.0
-27.1
-47.7
1600
-13.6
116.9
20.8
56.2
-27.4
-56.5
1800
-13.9
110.2
20.5
41.8
-27.6
-63.3
2000
-14.3
103.5
20.3
27.9
-28.1
-71.6
2200
-15.1
94.6
19.9
13.8
-28.5
-80.2
2400
-15.8
85.2
19.7
-1.1
-28.7
-88.9
2600
-16.8
72.7
19.5
-16.0
-29.4
-96.8
2800
-18.0
55.2
19.2
-31.3
-29.9
-105.7
3000
-19.8
25.5
19.0
-46.9
-30.6
-117.1
3200
-19.9
-16.8
18.6
-63.5
-31.0
-128.0
3400
-17.8
-59.0
18.3
-80.5
-31.8
-139.4
3600
-14.3
-90.8
17.7
-98.5
-32.8
-154.4
3800
-11.3
-114.3
17.0
-117.1
-34.0
-168.1
4000
-8.7
-132.7
16.1
-135.8
-34.8
173.1
S22 (dB)
-9.8
-9.9
-10.0
-10.5
-10.7
-11.3
-12.4
-13.1
-14.3
-15.4
-16.3
-17.5
-18.0
-17.4
-16.6
-14.9
-14.1
-13.1
-12.4
-11.9
-11.2
-10.7
S22 (ang)
177.2
171.9
162.2
145.5
129.3
111.8
94.3
77.8
58.7
36.8
15.3
-11.2
-39.1
-65.9
-94.2
-115.0
-131.7
-148.3
-160.2
-173.9
174.5
167.6
Datasheet Rev. M 05-06-14
© 2014 TriQuint
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Disclaimer: Subject to change without notice
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