TQP3M9008_15 Datasheet, PDF (2/10 Pages) TriQuint Semiconductor – High Linearity LNA Gain Block

TQP3M9008
High Linearity LNA Gain Block
Absolute Maximum Ratings
Parameter
Storage Temperature
RF Input Power, CW, 50Ω, T=25^°C
Device Voltage (V_DD)
Reverse Device Voltage
Rating
−65 to 150 °C
+23 dBm
+7 V
−0.3 V
Operation of this device outside the parameter ranges
given above may cause permanent damage.
Recommended Operating Conditions
Parameter
Min Typ Max Units
Device Voltage (V_DD)
+3.0 +5.0 +5.25 V
T_CASE
−40
Tj for >10⁶ hours MTTF
+105 °C
+190 °C
Electrical specifications are measured at specified test
conditions. Specifications are not guaranteed over all
recommended operating conditions.
Electrical Specifications
Test conditions unless otherwise noted: V_DD = +5 V, Temp. = +25 °C, 50 Ω system
Parameter
Conditions
Min
Operational Frequency Range
50
Test Frequency
Gain
19
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
Pout = +3 dBm/tone, ∆f = 1 MHz
+32.5
Noise Figure
Current, I_DD
Thermal Resistance, θ_jc
Junction to case
Typ
1900
20.6
16
17
+20
+36
1.3
85
Max
4000
22
100
38.7
Units
MHz
MHz
dB
dB
dB
dBm
dBm
dB
mA
°C/W
Datasheet Rev. M 05-06-14
© 2014 TriQuint
- 2 of 10 -
Disclaimer: Subject to change without notice
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