TQP0102 Datasheet, PDF (3/10 Pages) TriQuint Semiconductor – 5 W, DC to 4 GHz, GaN Power Transistor

TQP0102
5 W, DC to 4 GHz, GaN Power Transistor
Thermal Information
Parameter
Conditions
Thermal Resistance at
Average Power (θJC)
TC = 85°C, TCH = 114.1°C,
CW: PDISS = 1.59 W, POUT = 0.35 W
Thermal Resistance at
Saturated Power (θJC)
TC = 85°C, TCH = 135.1°C,
CW: PDISS = 2.65 W, POUT = 5.59 W
Notes:
1. Thermal resistance measured to package backside.
Value
18.3
18.9
Units
°C/W
°C/W
Median Lifetime
Median Lifetime vs. Channel Temperature
1E+18
1E+17
1E+16
1E+15
1E+14
1E+13
1E+12
1E+11
1E+10
1E+09
1E+08
1E+07
1E+06
1E+05
1E+04
25 50 75 100 125 150 175 200 225 250 275
Channel Temperature (°C)
Preliminary Datasheet: Rev E 09-28-15
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