TQP0102 Datasheet, PDF (1/10 Pages) TriQuint Semiconductor – 5 W, DC to 4 GHz, GaN Power Transistor

Applications
• Small Cell Base Station
• Microcell Base Station Driver
• Active Antenna
• General Purpose Applications
TQP0102
5 W, DC to 4 GHz, GaN Power Transistor
Product Features
• Operating Frequency Range: DC to 4 GHz
• Output Power (PSAT): 5 W
• Drain Efficiency: 68%
• Linear Gain: 19 dB
• Package Dimensions: 3 x 3 x 0.85 mm
16 Pin 3x3mm QFN
Functional Block Diagram
N/C 1
V_G, RF In 2
N/C 3
N/C 4
16 15 14 13
12 N/C
11 VD, RF Out
10 VD, RF Out
9 N/C
5
6
7
8
General Description
The TQP0102 is a wide band over-molded QFN discrete
GaN power amplifier. The device is a single stage
unmatched power amplifier transistor.
The TQP0102 can be used in Doherty architecture for the
final stage of a base station power amplifier for small cell
applications. The TQP0102 can also be used in microcell
and active antenna applications.
The wide bandwidth of the TQP0102 makes it suitable for
many different applications from DC to 4 GHz. TQP0102
can deliver PSAT of 5 W at 28 to 32 V operation.
Lead-free and ROHS compliant.
Pin Configuration
Pin No.
1, 3-9, 12-16
2
10-11
Backside Paddle
Label
N/C
RF IN, VG
RF OUT, VD
RF/DC GND
Ordering Information
Part No. ECCN Description
TQP0102
EAR99 5 W, DC to 4 GHz, GaN PA
TQP0102-PCB EAR99 2.5-2.7 GHz Evaluation Board
Preliminary Datasheet: Rev E 09-28-15
© 2014 TriQuint
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