TGF2023-01_15 Datasheet, PDF (3/13 Pages) TriQuint Semiconductor – 6 Watt Discrete Power GaN on SiC HEMT

TGF2023-01
Table III
RF Characterization 1/
Bias: Vd = 28 V, Idq = 125 mA, Vg = -3.6V Typical
SYMBOL PARAMETER
Power
Tuned:
Psat
PAE
Gain
Saturated Output
Power
Power Added
Efficiency
Power Gain
Rp 2/
Parallel Resistance
Cp 2/
Г_L 3/
Efficiency
Tuned:
Psat
PAE
Gain
Parallel
Capacitance
Load Reflection
Coefficient
Saturated Output
Power
Power Added
Efficiency
Power Gain
Rp 2/
Parallel Resistance
Cp 2/
Г_L 3/
Parallel
Capacitance
Load Reflection
Coefficient
3 GHz
38.1
60
18.4
79.3
0.524
0.34‚90
36.8
66
17.7
153
0.426
0.51‚60
6 GHz 10 GHz 14 GHz UNITS
37.5
37.4
36.1
dBm
58
52
42
%
12.7
81.9
0.348
10.4
61.5
0.426
7.1
49.9
0.432
dB
Ω·mm
pF/mm
0.44‚99 0.64‚130 0.73‚143
-
35.8
37.1
36.1
dBm
66
54
43
%
13.3
171
0.372
10.7
72.1
0.414
7.0
53.1
0.472
dB
Ω·mm
pF/mm
0.67‚87 0.66‚126 0.77‚144
-
1/
Values in this table are measured on a 1.25 mm GaN/SiC unit
2/
Large signal equivalent output network (normalized) (see figure, pg 11)
3/
Optimum Gamma_Load (Г_L) for maximum power or maximum PAE
3
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Apr 2011 © Rev D