|
TGF2023-01_15 Datasheet, PDF (1/13 Pages) TriQuint Semiconductor – 6 Watt Discrete Power GaN on SiC HEMT | |||
|
TGF2023-01
6 Watt Discrete Power GaN on SiC HEMT
Key Features
⢠Frequency Range: DC - 18 GHz
⢠38 dBm Nominal Psat at 3 GHz
⢠66% Maximum PAE
⢠18 dB Nominal Power Gain at 3 GHz
⢠Bias: Vd = 28 - 32 V, Idq = 125 mA, Vg = -3.6 V
Typical
⢠Technology: 0.25 um Power GaN on SiC
⢠Chip Dimensions: 0.82 x 0.66 x 0.10 mm
Measured Performance
Bias conditions: Vd = 28 V, Idq = 125 mA, Vg = -3.6 V Typical
Primary Applications
⢠Defense & Aerospace
⢠Broadband Wireless
Product Description
The TriQuint TGF2023-01 is a discrete 1.25 mm
GaN on SiC HEMT which operates from DC-18
GHz. The TGF2023-01 is designed using
TriQuintâs proven 0.25um GaN production process.
This process features advanced field plate
techniques to optimize microwave power and
efficiency at high drain bias operating conditions.
The TGF2023-01 typically provides 38 dBm of
saturated output power with power gain of 18 dB at
3 GHz. The maximum power added efficiency is
66% which makes the TGF2023-01 appropriate for
high efficiency applications.
Lead-free and RoHS compliant
.
Datasheet subject to change without notice.
1
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Apr 2011 © Rev D
|
▷ |