TGF2021-02 Datasheet, PDF (3/8 Pages) TriQuint Semiconductor – DC - 12 GHz Discrete power pHEMT

SYMBOL
Power Tuned:
Psat
PAE
Gain
Rp 2/
Cp 2/
Γ_L 3/,4/
Efficiency Tuned:
Psat
PAE
Gain
Rp 2/
Cp 2/
Γ_L 3/, 4/
Advance Product Information
September 19, 2005
TABLE III
RF CHARACTERIZATION TABLE 1/
TGF2021-02
(T_A = 25 °C, Nominal)
PARAMETER
Vd = 10V
Idq = 150mA
Vd = 12V
Idq = 150mA
UNITS
Saturated Output Power
Power Added Efficiency
Power Gain
Parallel Resistance
Parallel Capacitance
Load Reflection coefficient
33.8
50
11
13.30
0.927
0.719 ∠ 164.9
34.5
48
11
15.97
0.953
0.720 ∠ 161.4
dBm
%
dB
Ω
pF
-
Saturated Output Power
Power Added Efficiency
Power Gain
Parallel Resistance
Parallel Capacitance
Load Reflection coefficient
33
59
11.5
24.50
1.077
0.778 ∠ 155.2
33.7
55
11
27.79
1.011
0.774 ∠ 152.7
dBm
%
dB
Ω
pF
-
1/ Values in this table are scaled from measurements taken from a 1mm unit pHEMT cell at 10 GHz
2/ Large signal equivalent pHEMT output network
3/ Optimum load impedance for maximum power or maximum PAE at 10 GHz
4 The reflection coefficients for this device have been calculated from the scaled large signal Rp & Cp.
The series resistance and inductance (Rd and Ld) shown in the Figure on page 4 is excluded
TABLE IV
THERMAL INFORMATION
Parameter
Test Conditions
θ_JC Thermal Resistance
Vd = 12 V
(channel to backside of carrier) ^{Idq = 150 mA}
Pdiss = 1.8 W
T_CH
T_JC
T_M
(^oC) ₍q_C/W) (HRS)
148
43.3 1.2 E+6
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo
Carrier at 70°C baseplate temperature.
3
TriQuint Semiconductor Texas: Phone [phone] Fax [phone] Email: [e-mail] Web: www.triquint.com