TGF2021-02 Datasheet, PDF (1/8 Pages) TriQuint Semiconductor – DC - 12 GHz Discrete power pHEMT

Advance Product Information
September 19, 2005
DC - 12 GHz Discrete power pHEMT
TGF2021-02
Product Description
Key Features and Performance
• Frequency Range: DC - 12 GHz
• > 33 dBm Nominal Psat
• 59% Maximum PAE
• 11 dB Nominal Power Gain
• Suitable for high reliability applications
• 2mm x 0.35 m Power pHEMT
• Nominal Bias Vd = 8-12V, Idq = 150-250mA
(Under RF Drive, Id rises from 150mA to 480mA)
• Chip Dimensions: 0.57 x 0. 79 x 0.10 mm
(0.022 x 0.031 x 0.004 in)
The TriQuint TGF2021-02 is a discrete
2 mm pHEMT which operates from DC-
12 GHz. The TGF2021-02 is designed
using TriQuint’s proven standard
0.35um power pHEMT production
process.
The TGF2021-02 typically provides
> 33 dBm of saturated output power
with power gain of 11 dB. The
maximum power added efficiency is
59% which makes the TGF2021-02
appropriate for high efficiency
applications.
The TGF2021-02 is also ideally suited
for Point-to-point Radio, High-reliability
space, and Military applications.
The TGF2021-02 has a protective
surface passivation layer providing
environmental robustness.
Primary Applications
• Point-to-point Radio
• High-reliability space
• Military
• Base Stations
• Broadband Wireless Applications
35
30
25
MSG
20
15
MAG
10
5
0
0
2
4
6
8
10 12 14 16
Frequency (GHz)
Lead-free and RoHS compliant
Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to
change without notice.
1
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