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CGB240 Datasheet, PDF (3/14 Pages) TriQuint Semiconductor – 2-Stage Bluetooth InGaP HBT Power Amplifier
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CGB 240 Datasheet
Electrical Characteristics of CGB240 used in PA Reference Design (cont.)
Parameter
Symbol
Limit Values
Unit Test Conditions
Min Typ Max
Output Power
Power Step 2
Supply Current
Power Step 2
Power Added Efficiency
Power Step 2
Output Power
Power Step 3
Supply Current
Power Step 3
Power Added Efficiency
Power Step 3
Output Power
Power Step 4
Supply Current
Power Step 4
Power Added Efficiency
Power Step 4
2nd Harm. Suppression
Power Step 4
3rd Harm. Suppression
Power Step 4
Turn-Off Current
POUT,2
ICC,2
PAE 2
POUT,3
ICC,3
PAE 3
POUT,4
ICC,4
PAE 4
h2
h3
ICC,OFF
12
25
20
17
52
32
22
23
125
40
50
- 35
- 50
1
dBm
mA
%
dBm
mA
%
24 dBm
mA
-%
dBc
dBc
uA
PIN = + 3 dBm
VCTR = 1.3 V
PIN = + 3 dBm
VCTR = 1.3 V
PIN = + 3 dBm
VCTR = 1.3 V
PIN = + 3 dBm
VCTR = 1.5 V
PIN = + 3 dBm
VCTR = 1.5 V
PIN = + 3 dBm
VCTR = 1.5 V
PIN = + 3 dBm
VCTR = 2.5 V
PIN = + 3 dBm
VCTR = 2.5 V
PIN = + 3 dBm
VCTR = 2.5 V
PIN = + 3 dBm
VCTR = 2.5 V
PIN = + 3 dBm
VCTR = 2.5 V
VCC = 3.2 V; VCTR <
0.4 V; No RF Input
Off-State Isolation
S21,0
Rise Time 1 )
TR1
Rise Time 2 1)
TR2
Fall Time 1 1)
TF1
Fall Time 2 1)
TF2
Maximum Load VSWR
(no damage to device)
allowed for 10s
VSWR
26
dB
PIN = + 3 dBm
VCTR = 0 V
1 µs
VCC = 5.0 V
VCTR = 0 to 1V Step
1 µs
VCC = 5.0 V
VCTR = 0 to 3V Step
1 µs
VCC = 5.0 V
VCTR = 1 to 0V Step
1 µs
VCC = 5.0 V
VCTR = 3 to 0V Step
6
PIN = + 5 dBm; VCC =
4.8 V; VCTR = 2.5 V
ZIN = 50 Ohms
1) Rise time TR: time between turn-on of VCTR voltage until reach of 90% of full output power level.
Fall time TF: as time between turn-off of VCTR voltage until reach of 10% of full output power level.
Please note: Reduced Vccp,max for pulsed operation applies (see “absolute maximum ratings”).
For further information please visit www.triquint.com
Rev. 1.6 October 20th, 2004
pg. 4/13
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