CGB240 Datasheet, PDF (1/14 Pages) TriQuint Semiconductor – 2-Stage Bluetooth InGaP HBT Power Amplifier

CGB 240
Datasheet
2-Stage Bluetooth InGaP HBT Power Amplifier
Description:
Applications:
The CGB240 GaAs Power Amplifier MMIC has been
especially developed for wireless applications in the
2.4 - 2.5 GHz ISM band (e.g. Bluetooth class 1). Its
high power added efficiency and single positive sup-
ply operation makes the device ideally suited to
handheld applications. The device delivers 23 dBm
output power at a supply voltage of 3.2 V, with an
overall PAE of 50%. The output power can be ad-
justed using an analog control voltage (V_CTR). Simple
external input-, interstage-, and output matching cir-
cuits are used to adapt to the different requirements
of linearity and harmonic suppression in various ap-
plications.
For WLAN applications (IEEE802.11b) or appli-
cations serving both WLAN and Bluetooth, we
recommend to use the CGB240B device.
• Bluetooth Class 1
• Cordless Phones
• Home RF
Features:
• Single voltage supply.
• Wide operating voltage range 2.0 - 5.5 V.
• P_OUT = 23 dBm at V_C = 3.2 V.
• Overall power added efficiency (PAE) typi-
cally 50%.
• High PAE at low–power mode.
• Analog power control with four power
steps.
• Straight-Forward Matching; Few external
components.
Package Outline:
1
5
TSMSOSPO-P1-01-02
Pin Configuration:
1 & 2:
3:
4, 5, & 10:
6:
7:
8 & 9:
11 (Paddle):
Vc1
RF In
NC
Vcntrl1
Vcntrl2
Vc2
GND
For further information please visit www.triquint.com
Rev. 1.6 October 20th, 2004
pg. 2/13