TGS4304 Datasheet, PDF (2/10 Pages) TriQuint Semiconductor – High Power Ka-Band Absorptive SPDT Switch

Advance Product Information
September 26, 2005
TGS4304
TABLE I
MAXIMUM RATINGS
Symbol
V_C
I_C
P_IN
T_M
T_STG
Parameter 1/
Control Voltage
Control Current
Input Continuous Wave Power
Mounting Temperature (30 Seconds)
Storage Temperature
Value
-5V to +25V
34 mA
38 dBm
320 ⁰C
-65 to 150 ⁰C
Notes
2/
2/
1/ These ratings represent the maximum operable values for this device.
2/ V_C and I_C are per bias pad.
3/ Operation above 30dBm requires control voltages above +7.5V.
Symbol
TABLE II
RF CHARACTERIZATION TABLE
(T_A = 25°C, Nominal)
(V_A = +5V, I_A = 0mA, V_B = -4V, I_B = 30mA)
Parameter
Test Conditions
Typ
Units Notes
IL
Insertion Loss
F = 32 – 34 GHz
F = 34 – 37 GHz
F = 37 – 40 GHz
1.3
0.9
dB
1.3
RL
Return Loss
F = 32 – 40 GHz
10
dB
P1dB
Output Power @
1dB Gain
Compression
V_C = +5V
V_C = +7.5V
V_C = +10V
30.5
32
dBm 1/ 2/
33
Note: Table II Lists the RF Characteristics of typical devices as determined by fixtured
measurements.
1/ Frequency = 35GHz
2/ Extrapolated from the data
2
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