TGA4530_15 Datasheet, PDF (2/12 Pages) TriQuint Semiconductor – K Band High Linearity Power Amplifier

TGA4530
TABLE I
ABSOLUTE MAXIMUM RATINGS 1/
SYMBOL
PARAMETER
Vd
Positive Supply Voltage
Vg
Id
| I_G |
P_IN
P_D
Tchannel
Negative Supply Voltage Range
Positive Supply Current
Gate Supply Current
Input Continuous Wave Power
Power Dissipation
Channel Temperature
Mounting Temperature (30 Seconds)
Storage Temperature
VALUE
8V
-5 V TO 0 V
1.75 A
35 mA
26 dBm
14.0 W
200 °C
320 °C
-65 to 200 °C
NOTES
2/
1/ These ratings represent the maximum operable values for this device. Stresses beyond those listed
under “Absolute Maximum Ratings” may cause permanent damage to the device and/or affect device
lifetime. These are stress ratings only, and functional operation of the device at these conditions is not
implied.
.2/ Junction operating temperature will directly affect the device median lifetime. For maximum life, it is
recommended that junction temperatures be maintained at the lowest possible levels.
TABLE II
ELECTRICAL CHARACTERISTICS
(Ta = 25 °C Nominal)
PARAMETER
TYPICAL
Frequency Range
17 - 21
Drain Voltage, Vd
7
Drain Current, Id
825
Gate Voltage, Vg
-0.45
Small Signal Gain, S21
20
Input Return Loss, S11
20
Output Return Loss, S22
20
Saturated Output Power @ Pin = 16dBm, Psat
32
Output Power @ 1dB Gain Compression, P1dB
30
Output Third Order Intercept, OTOI @ 20dBm/Tone
42
Small Signal Gain Temperature Coefficient
-0.03
Noise Figure @ 19GHz
6
UNITS
GHz
V
mA
V
dB
dB
dB
dBm
dBm
dBm
dB/⁰C
dB
2
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Oct 2008 © Rev A