TGA4530_15 Datasheet, PDF (1/12 Pages) TriQuint Semiconductor – K Band High Linearity Power Amplifier

TGA4530
K Band High Linearity Power Amplifier
Key Features
• Frequency Range: 17 - 21 GHz
• 20 dB Gain
• 30 dBm nominal P1dB
• 42 dBm nominal OTOI
• 20 dB Return Loss
• Bias 5 - 7 V @ 825 mA
• 0.25 um 3MI pHEMT technology
• Chip Dimensions 2.43 x 1.45 x 0.1mm
Measured Fixtured Data
Bias Conditions: Vd = 7 V, Id = 825 mA
25
20
15
Gain
10
IRL
5
ORL
0
-5
-10
-15
-20
-25
-30
-35
17.0 17.5 18.0 18.5 19.0 19.5 20.0 20.5 21.0
Frequency (GHz)
44
42
40
38
OTOI @ 20dBm/Tone
36
P1dB
34
32
30
28
26
24
17.0 17.5 18.0 18.5 19.0 19.5 20.0 20.5 21.0
Frequency (GHz)
Primary Applications
• Point-to-Point Radio
• K Band Sat-Com
Product Description
The TriQuint TGA4530 is a High Power Amplifier
MMIC for 17 – 21GHz applications. The part is
designed using TriQuint’s 0.25 um 3MI pHEMT
production process.
The TGA4530 nominally provides 30 dBm output
power @ 1dB gain compression and 42 dBm OTOI
at a bias of 7 V and 825 mA. The typical gain is 20 dB.
The part is ideally suited for low cost emerging
markets such as Point-to-Point Radio, and K-band
Satellite Communications.
The TGA4530 is 100% DC and RF tested on-wafer to
ensure performance compliance.
The TGA4530 has a protective surface passivation
layer providing environmental robustness.
Lead-Free & RoHS compliant
Note: Device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change
without notice
1
TriQuint Semiconductor: www.triquint.com [phone] Fax [phone] [e-mail] Web: www.triquint.com
Oct 2008 © Rev A