TGA2590-CP Datasheet, PDF (2/11 Pages) TriQuint Semiconductor – 6 to 12GHz, 30W GaN Power Amplifier

TGA2590-CP
6 to 12GHz, 30W GaN Power Amplifier
Absolute Maximum Ratings
Recommended Operating Conditions
Parameter
Drain Voltage (V_D)
Gate Voltage Range (V_G)
Drain Current (I_D)
Gate Current (I_G)
Power Dissipation (P_DISS), 85°C
Value
40 V
−8 to 0 V
8A
−20 to 200 mA
135 W
Input Power (P_IN), CW, 50 Ω, 85°C
30 dBm
Input Power (P_IN), CW, VSWR 6:1,
V_D = 20 V, 85°C
Channel Temperature (T_CH)
Mounting Temperature
(30 Seconds)
27 dBm
275°C
260°C
Storage Temperature
−55 to 150°C
Operation of this device outside the parameter ranges
given above may cause permanent damage. These are
stress ratings only, and functional operation of the device at
these conditions is not implied.
Parameter
Value
Drain Voltage (V_D)
20 - 25 V
Drain Current (I_DQ)
2A
Drain Current @ Pin = 23 dBm (I_{D_DRIVE}) See plots p. 4
Gate Voltage (V_G)
−2.4 V (Typ.)
Gate Current @ Pin = 23 dBm (I_{G_DRIVE})
120 mA
Input Power (P_IN)
+17 to +25 dBm
Electrical specifications are measured at specified test
conditions. Specifications are not guaranteed over all
recommended operating conditions.
Electrical Specifications
Test conditions unless otherwise noted: 25 °C, CW, VD = 20 V, IDQ = 2 A, VG = −2.4 V Typ.,
Parameter
Min
Typical
Operational Frequency Range
6
Drain Voltage (V_D)
20
Load VSWR
Input Power (P_IN)
Output Power (P_IN = 23 dBm)
Power-Added Efficiency (P_IN = 23 dBm)
Small Signal Gain
17
46
> 30
35
Input Return Loss
5
Output Return Loss
5
Gain Temperature Coefficient
-0.07
Power Temperature Coefficient
-0.015
Max
12
25
2.0:1
25
Units
GHz
V
dBm
dBm
%
dB
dB
dB
dB/°C
dBm/°C
Preliminary Datasheet: RevA 06-05-15
© 2015 TriQuint
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Disclaimer: Subject to change without notice
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