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TGA2590-CP Datasheet, PDF (1/11 Pages) TriQuint Semiconductor – 6 to 12GHz, 30W GaN Power Amplifier | |||
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Applications
ï· Electronic Warfare
ï· Commercial and Military Radar
TGA2590-CP
6 to 12GHz, 30W GaN Power Amplifier
Product Features
ï· Frequency Range: 6 - 12 GHz
ï· POUT: > 45 dBm (PIN = 23 dBm)
ï· PAE: > 30 % (PIN = 23 dBm)
ï· Small Signal Gain: 35 dB
ï· Bias: VD = 20 V (CW), IDQ = 2 A, VG = â2.4 V typ.
ï· Package Dimensions: 15.24 x 15.24 x 3.5 mm
Functional Block Diagram
1
10
2
9
3
8
4
7
5
6
General Description
TriQuint's TGA2590-CP is a wideband MMIC power
amplifier fabricated on TriQuint's production 0.25um
GaN on SiC process. The TGA2590-CP operates from
6-12GHz and provides 30W of saturated output power
with >22dB of large signal gain and >30% power-added
efficiency.
The TGA2590-CP is offered in a Cu-base package that
can either be bolted down or eutectically attached for
superior thermal management.
The TGA2590-CP is fully matched to 50âΩ with DC
blocking caps at both RF ports allowing for simple
system integration. The broadband performance
supports both electronic warfare and radar opportunities
across defense and commercial markets.
Lead-free and RoHS compliant.
Evaluation boards are available upon request.
Pin Configuration
Pad No.
1, 5
2, 4, 7, 9
3
6, 10
8
Symbol
VG
Gnd
RFIN
VD
RFOUT
Ordering Information
Part
TGA2590-CP
ECCN Description
3A001.b.2.b 6-12GHz 30W PA
Preliminary Datasheet: RevA 06-05-15
© 2015 TriQuint
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Disclaimer: Subject to change without notice
www.triquint.com
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