ML485-G_15 Datasheet, PDF (2/9 Pages) TriQuint Semiconductor – 1.5-3.2 GHz High IP3 Mixer with Integrated LO Amp

ML485
1.5-3.2 GHz High IP3 Mixer with Integrated LO Amp
Absolute Maximum Ratings
Parameter
Storage Temperature
Rating
−65 to +150 °C
DC Voltage
+7 V
Input IF / RF Power, CW, +25 °C
+27 dBm
LO Power
+10 dBm
Operation of this device outside the parameter ranges
given above may cause permanent damage.
Recommended Operating Conditions
Parameter
V_CC
T_CASE
Tj for >10⁶ hours MTTF
Min
+4.75
−40
Typ
+5.0
Max
+5.25
+85
+150
Units
V
°C
°C
Electrical specifications are measured at specified test
conditions. Specifications are not guaranteed over all
recommended operating conditions.
Electrical Specifications
Test conditions unless otherwise noted: V_CC =+5 V, Temp=+25 °C, 50 Ω system. (see note 1)
Parameter
Min Typ Max Min Typ Max Min Typ Max
RF Frequency Range
1700 – 1800
1800 – 2200
2300 – 2400
LO Frequency Range
1400 – 1750
1500 – 2150
2000 – 2350
IF Freq Range
50 – 300
50 – 300
50 – 300
SSB Conversion Loss
9.4
8.7 10
8.5
Input IP3 (see note 2) +28 +34
+30 +35
+37
LO Leakage RF Port
−5
−2
−1
LO Leakage IF Port
−11
−18
−25
RF–IF Isolation
13
16
14
RF Return Loss
13
13
15
IF Return Loss
14
14
14
LO Return Loss
10
10
12
Input P1dB
+20
+20
+19.5
LO Drive Level
−2
0
+4 −2
0
+4 −2
0
+4
Min Typ Max
2500 – 2700
2200 – 2650
50 – 300
9
+36
−1
−15
11
16
14
13
+19.5
−2
0
+4
Parameter
Min Typ Max Units
Supply Voltage
+5
V
Supply Current
40
mA
Thermal Resistance (see note 3)
84  °C/W
Notes:
1. Specifications are shown with 0dBm LO drive and IF = 200 MHz in a down
converting configuration with a low-side LO.
2. IIP3 is measured with ∆f = 1 MHz with RFin = 0 dBm / tone.
3. Thermal resistance is specified junction to case.
Units
MHz
MHz
MHz
dB
dBm
dBm
dBm
dB
dB
dB
dB
dBm
dBm
Data Sheet Rev. D 07-22-14
© 2014 TriQuint
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Disclaimer: Subject to change without notice
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