TGF2953_15 Datasheet, PDF (14/21 Pages) TriQuint Semiconductor – 12 Watt Discrete Power GaN on SiC HEMT

TGF2953
12 Watt Discrete Power GaN on SiC HEMT
Model Load Pull Contours
Vds = 32V, Idq = 50mA, Simulated signal: 10% pulses. Bond wires not included. See page 19 for reference planes.
3dB compression performance referenced to maximum large-signal gain.
Zs(fo) = 0.9_Ω
Zs(2fo) = 6.1_Ω
Zs(3fo) = 6.1_Ω
Zl(2fo) = 14_Ω
Zl(3fo) = 14_Ω
10GHz, Load-pull
11
10.5
9.96
9.46
55.8
50.8
45.8
41.1
40.9
40.7
• ^{Max Power is 41.2dBm}
at Z = 8.924+12.857i_Ω
Γ ^{= 0.0708+0.5211i}
• ^{Max Gain is 11.1dB}
at Z = 5.448+18.933i_Ω
Γ ^{= 0.2608+0.7196i}
• ^{Max PAE is 56%}
at Z = 7.266+13.961i_Ω
Γ ^{= 0.0799+0.604i}
Zo = 14_Ω
Datasheet: Rev A 10-22-14
© 2014 TriQuint
Power
Gain
PAE
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