TGF2953_15 Datasheet, PDF (1/21 Pages) TriQuint Semiconductor – 12 Watt Discrete Power GaN on SiC HEMT

Applications
• Marine radar
• Satellite communications
• Point to point communications
• Military communications
• Broadband amplifiers
• High efficiency amplifiers
TGF2953
12 Watt Discrete Power GaN on SiC HEMT
Product Features
• Frequency Range: DC - 12 GHz
• 41.2 dBm Nominal PSAT at 3.5 GHz
• 73.7% Maximum PAE at 3.5 GHz
• 18.2 dB Nominal Power Gain at 3.5 GHz
• Bias: VD = 32 V, IDQ = 50 mA
• Technology: TQGaN25 on SiC
• Chip Dimensions: 1.01 x 1.14 x 0.10 mm
Functional Block Diagram
General Description
The TriQuint TGF2953 is a discrete 2.52 mm GaN on
SiC HEMT which operates from DC-12 GHz. The
TGF2953 is designed using TriQuint’s proven TQGaN25
production process. This process features advanced
field plate techniques to optimize microwave power and
efficiency at high drain bias operating conditions.
Pad Configuration
Pad No.
1-2
3
Backside
Symbol
VG / RF IN
VD / RF OUT
Source / Ground
The TGF2953 typically provides 41.2 dBm of saturated
output power with power gain of 18.2 dB at 3.5 GHz.
The maximum power added efficiency is 73.7 % which
makes the TGF2953 appropriate for high efficiency
applications.
Lead-free and RoHS compliant.
Ordering Information
Part
TGF2953
ECCN
EAR99
Description
12 Watt GaN HEMT
Datasheet: Rev A 10-22-14
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