TGF2956_15 Datasheet, PDF (13/19 Pages) TriQuint Semiconductor – 55 Watt Discrete Power GaN on SiC HEMT

TGF2956
55 Watt Discrete Power GaN on SiC HEMT
Model Load Pull Contours
Vds = 32V, Idq = 200mA. 3dB compression referenced to peak gain.
Simulated signal: 10% pulses. Bond wires not included. See page 17 for reference planes.
Zs(fo) = 0.44-0.42i_Ω
Zs(2fo) = 0.6_Ω
Zs(3fo) = 0.6_Ω
Zl(2fo) = 3.5_Ω
Zl(3fo) = 3.5_Ω
15GHz, Load-pull
9.45
8.95
8.45
• ^{Max Power is 47.3dBm}
at Z = 2.177+2.023i_Ω
Γ ^{= -0.094+0.3899i}
• ^{Max Gain is 9.6dB}
at Z = 0.954+3.723i_Ω
Γ ^{= 0.0749+0.7734i}
• ^{Max PAE is 46.1%}
at Z = 2.073+2.324i_Ω
Γ ^{= -0.0699+0.4462i}
41.7
47.2 47 ^46.8
36.7
31.7
Zo = 3.5_Ω
Power
Gain
PAE
Datasheet: Rev A 10-20-14
© 2014 TriQuint
- 13 of 19 -
Disclaimer: Subject to change without notice
www.triquint.com