TGF2956_15 Datasheet, PDF (1/19 Pages) TriQuint Semiconductor – 55 Watt Discrete Power GaN on SiC HEMT

Applications
• Defense & Aerospace
• Broadband Wireless
TGF2956
55 Watt Discrete Power GaN on SiC HEMT
Product Features
• Frequency Range: DC - 12 GHz
• 47.6 dBm Nominal PSAT at 3 GHz
• 69.7% Maximum PAE at 3 GHz
• 19.3 dB Nominal Power Gain at 3 GHz
• Bias: VD = 32 V, IDQ = 200 mA
• Technology: TQGaN25 on SiC
• Chip Dimensions: 1.01 x 2.88 x 0.10 mm
Functional Block Diagram
General Description
The TriQuint TGF2956 is a discrete 10.08 mm GaN on
SiC HEMT which operates from DC-12 GHz. The
TGF2956 is designed using TriQuint’s proven TQGaN25
production process. This process features advanced
field plate techniques to optimize microwave power and
efficiency at high drain bias operating conditions.
Pad Configuration
Pad No.
1-8
9-12
Backside
Symbol
VG / RF IN
VD / RF OUT
Source / Ground
The TGF2956 typically provides 47.6 dBm of saturated
output power with power gain of 19.3 dB at 3 GHz. The
maximum power added efficiency is 69.7 % which makes
the TGF2956 appropriate for high efficiency applications.
Lead-free and RoHS compliant.
Ordering Information
Part
TGF2956
ECCN Description
3A001b.3.b 55 Watt GaN HEMT
Datasheet: Rev A 10-20-14
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