TGA2511_15 Datasheet, PDF (11/15 Pages) TriQuint Semiconductor – X Band Low Noise Amplifier

1.200
(0.047)
1.105
(0.044)
RC
B
RC
B
0.600
(0.024)
1
TGA2511
Mechanical Drawing
0.783
(0.031)
1.035 1.246
(0.041) (0.049)
1.487
(0.059)
2
34
5
1.897 1.955
(0.075) (0.077)
6
7
0.600
(0.024)
0
0 0.095
(0.004)
12
11 10
9
0.783
(0.031)
1.035 1.246
(0.041) (0.049)
1.487
(0.059)
Units: millimeters (inches)
Thickness: 0.100 (0.004)
Chip edge to bond pad dimensions are shown to center of bond pad
Chip size tolerance: +/- 0.051 (0.002)
GND is back side of MMIC
Bond pad #1
Bond pad #2, 3, 12, 11
Bond pad #4, 10
Bond pad #5, 9
Bond pad #6, 8
Bond pad #7
(RF In)
(Vs)
(Vg)
(Vctrl)
(Vd)
(RF Out)
0.100 x 0.200 (0.004 x 0.008)
0.100 x 0.100 (0.004 x 0.004)
0.100 x 0.100 (0.004 x 0.004)
0.100 x 0.100 (0.004 x 0.004)
0.100 x 0.100 (0.004 x 0.004)
0.100 x 0.200 (0.004 x 0.008)
8
0.095
(0004)
1.817
(0.072)
2.050
(0.081)
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
11
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March 2010 © Rev A