TGA2511_15 Datasheet, PDF (1/15 Pages) TriQuint Semiconductor – X Band Low Noise Amplifier

TGA2511
X Band Low Noise Amplifier
Key Features
• Typical Frequency Range: 6 - 14 GHz
• 1.3 dB Nominal Noise Figure
• 20 dB Nominal Gain
• Bias: 5 V, 160 mA Gate Bias
5 V, 80 mA Self Bias
• 0.15 um 3MI pHEMT Technology
• Chip Dimensions 2.05 x 1.20 x 0.10 mm
(0.081 x 0.047 x 0.004 in)
Product Description
The TriQuint TGA2511 is a wideband LNA with
AGC amplifier for EW, ECM, and RADAR
receiver or driver amplifier applications.
Offering high gain 20dB typical from 6-14GHz,
the TGA2511provides excellent noise
performance with typical midband NF 1.3dB,
while the balanced topology offers good return
loss typically 15dB.
The TGA2511 is designed for maximum ease
of use. The large input FETs can handle up to
21dBm input power reliably. The part is also
assembled in self-biased mode, using a single
+5V supply connection from either side of the
chip, or in gate biased mode, allowing the user
to control the current for a particular
applications.
In self-biased mode the TGA2511 offers 6dBm
typical P1dB, while in gate-biased mode the
typical P1dB is over 12dBm. The small size of
2.46mm² allows ease of compaction into Multi-
Chip-Modules (MCMs).
The TGA2511 is 100% DC and RF tested on-
wafer to ensure performance compliance.
Lead-Free & RoHS compliant.
Primary Applications
• X-Band Radar
• EW, ECM
• Point-to-Point Radio
Measured Fixtured Data
Bias Conditions: Gate Bias Vd = 5 V, Id = 160 mA
30
GAIN
20
10
0
-10
IRL
ORL
-20
-30
4 6 8 10 12 14 16 18
Frequency (GHz)
5
4
3
2
1
0
4 6 8 10 12 14 16 18
Frequency (GHz)
Datasheet subject to change without notice
1
TriQuint Semiconductor: www. triquint.com [phone] Fax [phone] [e-mail]
March 2010 © Rev A