TGA2216-SM_15 Datasheet, PDF (11/18 Pages) TriQuint Semiconductor – 0.1 3.0GHz 10W GaN Power Amplifier

TGA2216-SM
0.1 – 3.0GHz 10W GaN Power Amplifier
Application Circuit (Coaxial input DC block and coaxial output bias tee)
Notes:
1.
2.
3.
VG1 & VG2 can be biased from either side (Top or Bottom.)
Coaxial input DC block (C11) is used for input port (RF In.)
External wide bandwidth Bias-Tee is used for output port (RF Out). VD is applied through the output Bias-
Tee.
Bias-up Procedure
Bias-down Procedure
1. Set I_D limit to 720mA, I_{G1 &} I_G2 limit to 5mA
2. Set V_G1 to -5.0V
3. Set V_G2 to (VD/2) - 2.7V or 40V/2 - 2.7V = 17.3V
4. Set VD +40V
1. Turn off RF signal
2. Reduce V_G1 to -5.0V. Ensure I_DQ ~ 0mA
3. Reduce V_G2 to 0V.
4. Set V_D to 0V
5. Adjust V_G1 more positive until I_DQ = 360mA (V_G1 ~ -
2.4V Typical)
6. Adjust VG2 to (VD/2) + VG1; (V_G2 ~ +17.7V Typical)
7. Apply RF signal
5. Turn off V_D supply
6. Turn off V_G2 supply
7. Turn off V_G1 supply
Preliminary Datasheet: Rev - 05-05-14
© 2014 TriQuint
- 11 of 18 -
Disclaimer: Subject to change without notice
www.triquint.com