TGA2216-SM_15 Datasheet, PDF (1/18 Pages) TriQuint Semiconductor – 0.1 3.0GHz 10W GaN Power Amplifier

Applications
 Commercial and military radar
 Communications
 Electronic Warfare
TGA2216-SM
0.1 – 3.0GHz 10W GaN Power Amplifier
Product Features
 Frequency Range: 0.1 – 3.0GHz
 P_SAT: >40dBm at PIN = 27dBm
 P1dB: >35dBm
 PAE: 50% @ midband
 Large Signal Gain: >13dB
 Small Signal Gain: 21dB
 Bias: V_D = 40V, I_DQ = 360mA, V_G1 = -2.4V Typical,
V_G2 = +17.7V Typical
 Wideband Flat Gain and Power
 Package Dimensions: 5.0 x 5.0 x 1.45 mm
QFN 5x5 mm 32L
Functional Block Diagram
32 31 30 29 28 27 26 25
1
2
3
4
RF IN 5
6
7
8
24
23
22
21
20 RF OUT
19
18
17
9 10 11 12 13 14 15 16
General Description
Pad Configuration
TriQuint’s TGA2216-SM is a wideband cascode amplifier
fabricated on TriQuint’s production 0.25um GaN on SiC
process. The cascode configuration offers exceptional
wideband performance as well as supporting 40V
operation. The TGA2216-SM operates from 0.1 - 3.0GHz
and provides greater than 10W of saturated output power
with greater than 13dB of large signal gain and greater
than 40% power-added efficiency.
The TGA2216-SM is available in a low-cost, surface
mount 32 lead 5x5 AIN QFN. It is ideally suited to
support both radar and communication applications
across defense and commercial markets as well as
electronic warfare. The TGA2216-SM is fully matched to
50Ω at both RF ports allowing for simple system
integration. DC blocks are required on both RF ports and
the drain voltage must be injected through an off chip
bias-tee on the RF output port.
Lead-free and RoHS compliant.
Evaluation boards are available upon request.
Pad No.
Symbol
1-2, 4, 6, 8-9, 16-17, 19, 21, 23-25, 32 GND
3, 7, 10-11, 13, 15, 18, 22, 26, 28, 30-31 NC
5
RF IN
12, 29
GATE1
14, 27
20
GATE 2
RF OUT,
DRAIN
Ordering Information
Part
TGA2216-SM
ECCN
EAR99
Description
0.1 – 3.0GHz 10W
GaN Power Amplifier
Preliminary Datasheet: Rev - 05-05-14
© 2014 TriQuint
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Disclaimer: Subject to change without notice
www.triquint.com