T1G6000528-Q3 Datasheet, PDF (11/16 Pages) TriQuint Semiconductor – 7W, 28V, DC – 6 GHz, GaN RF Power Transistor

T1G6000528-Q3
7W, 28V, DC – 6 GHz, GaN RF Power Transistor
Evaluation Board Performance: 3.0 to 3.5 GHz
T1G6000528-Q3 P3dB Compression in Narrowband Fixture
T1₂G₈6_V00_{, 2}0₅₈5_0V2_m8_, −_5AQ_0m;3_2AP_0,3₂₀d₀B_μ0µsC_esoecmc_–p−r₂e2s_00s%%iond_{duintuyNt−ycay-}rr_ccolyewc−p_luBelaspned_ulF_six_eture
70
Drain Eff. (%)
PAE (%)
68
66
64
62
60
58
56
54
52
530000
3050
3100
3150
3200 3250 3300
Frequency (MHz)
3350
3400
3450
3500
T1G6000_T5_1G2₆8₀-₀Q₀₅3₂₈P_−3_Qd₃ B_P3C_dBo_Cm_omp_pre_res_ss_sii_oo_nn_ini_Nn_arN_roa_wr_−r_Bo_aw_ndb_Fa_ixn_tud_re Fixture
28V, 2580Vm, 5A0m; 2A0, 200μ0sµesecc–−2200%%dduutyt−yc-ycclyecpleulspeulse
15
Power (W)
Gain (dB)
14.5
14
13.5
13
12.5
12
11.5
11
10.5
130000
3050
3100
3150
3200 3250 3300
Frequency (MHz)
3350
3400
3450
3500
Released Datasheet: Rev. K 8/11/2011
Copyright © 2011 TriQuint Semiconductor, Inc.
– 11 –
Disclaimer: Subject to change without notice
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