T1G6000528-Q3 Datasheet, PDF (1/16 Pages) TriQuint Semiconductor – 7W, 28V, DC – 6 GHz, GaN RF Power Transistor

T1G6000528-Q3
7W, 28V, DC – 6 GHz, GaN RF Power Transistor
Applications
• Wideband and narrowband defense and
commercial communication systems
–– General Purpose RF Power
–– Jammers
–– Radar
–– Professional radio systems
–– WiMAX
–– Wideband amplifiers
–– Test instrumentation
–– Cellular infrastructure
Available Package
Product Features
• Frequency: DC to 6 GHz
• Linear Gain: >10 dB at 6 GHz
• Operating Voltage: 28 V
• Output Power (P_3dB): >7 W at 6 GHz
• Lead-free and RoHS compliant
• Low thermal resistance package
Package Information
Package Type
Description
Q3
5.0mm x 4.0mm ceramic air
cavity straight lead package
Base
CuMo
General Description
The TriQuint T1G6000528-Q3 is a 7 W (P_3dB) discrete
GaN on SiC HEMT which operates from DC to 6 GHz
and typically provides >10 dB gain at 6 GHz. The
device is constructed with TriQuint’s proven 0.25
µm production process, which features advanced
field plate techniques to optimize power and effi-
ciency at high drain bias operating conditions. This
optimization can potentially lower system costs in
terms of fewer amplifier line-ups and lower thermal
management costs.
Ordering Information
Material No.
Part No.
1075579 T1G6000528-Q3
1081733
T1G6000528-Q3-
EVB3
Description
Packaged part
Narrowband
3.0 to 3.5 GHz
evaluation
board
ECCN
EAR99
EAR99
Released Datasheet: Rev. K 8/11/2011
Copyright © 2011 TriQuint Semiconductor, Inc.
–1–
Disclaimer: Subject to change without notice
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