T1G4020036-FL_15 Datasheet, PDF (11/21 Pages) TriQuint Semiconductor – 2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor

Typical Performance^(1,2)
T1G4020036-FL
2 x 120W Peak Power, 2 x24W Average Power,
36V DC – 3.5 GHz, GaN RF Power Transistor
T1G4020036 Gain and PAE vs. Pout
2.7GHz; Vds = 36V; Idq = 260mA; Pulse: 100us, 20%; Power Tuned
20
60
19
55
Zs = 7.27-j5.11Ω
18
Zl = 2.50-j2.05Ω
50
17
45
16
40
15
35
14
30
13
25
12
20
11
15
10
10
39 40 41 42 43 44 45 46 47 48 49 50 51 52
Pout [dBm]
T1G4020036 Gain and PAE vs. Pout
2.7GHz; Vds = 36V; Idq = 260mA; Pulse: 100us, 20%; Efficiency Tuned
20
70
19
65
18
60
17
55
16
Zs = 7.27-j5.11Ω
50
Zl = 2.36-j0.65Ω
15
45
14
40
13
35
12
30
11
25
10
20
40 41 42 43 44 45 46 47 48 49 50 51
Pout [dBm]
T1G4020036 Gain and PAE vs. Pout
2.9GHz; Vds = 36V; Idq = 260mA; Pulse: 100us, 20%; Power Tuned
20
60
19
55
Zs = 12.1-j9.87Ω
18
Zl = 2.84-j3.11Ω
50
17
45
16
40
15
35
14
30
13
25
12
20
11
15
10
10
39 40 41 42 43 44 45 46 47 48 49 50 51 52
Pout [dBm]
20
19
18
17
16
15
14
13
12
11
10
40
T1G4020036 Gain and PAE vs. Pout
2.9GHz; Vds = 36V; Idq = 260mA; Pulse: 100us, 20%; Efficiency Tuned
Zs = 12.1-j9.87Ω
Zl = 2.09-j1.37Ω
41 42 43 44 45 46 47 48 49 50
Pout [dBm]
70
65
60
55
50
45
40
35
30
25
20
51
1. Only half of the device was tested. Impedances were presented at device reference planes.
2. Drive-up condition: Vds = 36V, Idq = 260mA, Pulsed: 100uS pulse width, 20% duty cycle
Datasheet: Rev B 11-24-14
© 2014 TriQuint
- 11 of 21 -
Disclaimer: Subject to change without notice
www.triquint.com