T1G4020036-FL_15 Datasheet, PDF (10/21 Pages) TriQuint Semiconductor – 2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor

T1G4020036-FL
2 x 120W Peak Power, 2 x24W Average Power,
36V DC – 3.5 GHz, GaN RF Power Transistor
Load Pull Smith Charts ^{(1, 2)}
RF performance that the device typically exhibits when placed in the specified impedance environment. The impedances are not the
impedances of the device, they are the impedances presented to the device via an RF circuit or load-pull system. The impedances
listed follow an optimized trajectory to maintain high power and high efficiency. The impedances are for one independent half of the
device only.
Load Pull
3.5GHz, 36V, 260mA, 25^°C
Zs = 3.97+2.44i_Ω
Smith-Chart Zo = 10_Ω
-0.1
-0.2
-0.3
Max P3dB is 51.1dBm
at Zl = 2.14-3.97i_Ω
Max PAE is 49.8%
at Zl = 1.97-2.4i_Ω
Max G3dB is 15.3dB
at Zl = 1.32-2.52i_Ω
47.7 ^48.2
48.548.8
43.944.9
49.2
45.9
49.6
47.1
15.3 ¹⁵
48.4
49.8
14.8
50
50.5
14.5
45.9
14.1 _{13.8 44.9}
51.143.9
42.2
13.5 _13.2
P3dB
PAE3dB
-0.4
G3dB
Notes:
1. Only half of device was load pulled. Load-pull reference planes are shown on page 18.
2. Load-pull condition: Vds = 36V, Idq = 260mA, Pulsed: 100uS pulse width, 20% duty cycle
Datasheet: Rev B 11-24-14
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