QPD1016 Datasheet, PDF (11/25 Pages) TriQuint Semiconductor – 50 V, 500 W GaN RF Transistor

QPD1016
DC – 1.7 GHz, 50 V, 500 W GaN RF Transistor
Typical Measured Performance – Load-Pull Drive-up^{1, 2}
Notes:
1. C Test Conditions: VD = 50 V, IDQ = 1000 mA, 300 uS Pulse Width, 10% Duty Cycle
2. See page 19 for load-pull and source-pull reference planes where the performance was measured.
Gain and PAE vs. Output Power
1.3 GHz - Power Tuned
27
100
26
Gain ₉₀
PAE
25
80
24
70
23 ^{Zs(1fo) = 0.47-1.02i}
60
Zs(2fo) = 1.33-3.6i
22 Zs(3fo) = 3.08+0.02i
50
Zl(1fo) = 1.39-0.69i
21 Zl(2fo) = 5.58+7.55i
40
20
30
19
20
18
10
17
0
47 48 49 50 51 52 53 54 55 56 57 58 59
Output Power [dBm]
Gain and PAE vs. Output Power
1.4 GHz - Power Tuned
27
100
26
Gain ₉₀
PAE
25
80
24 _{Zs(1fo) = 0.38-1.38i}
70
23 ^{Zs(2fo) = 0.82-2i}
60
Zs(3fo) = 2.44+1.76i
22 Zl(1fo) = 1.38-0.68i
50
Zl(2fo) = 5.56+7.59i
21
40
20
30
19
20
18
10
17
0
47 48 49 50 51 52 53 54 55 56 57 58 59
Output Power [dBm]
28
27
26
25
24
23
22
21
20
19
18
48
Gain and PAE vs. Output Power
1.3 GHz - Efficiency Tuned
Zs(1fo) = 0.47-1.02i
Zs(2fo) = 1.33-3.6i
Zs(3fo) = 3.08+0.02i
Zl(1fo) = 1.51+0.22i
Zl(2fo) = 5.53+7.53i
49 50 51 52 53 54 55
Output Power [dBm]
100
Gain
PAE
90
80
70
60
50
40
30
20
10
0
56 57
Gain and PAE vs. Output Power
1.4 GHz - Efficiency Tuned
28
27
26
25
Zs(1fo) = 0.38-1.38i
24 ^{Zs(2fo) = 0.82-2i}
Zs(3fo) = 2.44+1.76i
23 Zl(1fo) = 1.38-0.35i
Zl(2fo) = 5.52+7.69i
22
21
20
19
18
48 49 50 51 52 53 54 55 56
Output Power [dBm]
100
Gain ₉₀
PAE
80
70
60
50
40
30
20
10
0
57 58
Datasheet Rev. A, December 16, 2016 | Subject to change without
notice
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