QPD1016 Datasheet, PDF (1/25 Pages) TriQuint Semiconductor – 50 V, 500 W GaN RF Transistor

QPD1016
DC – 1.7 GHz, 50 V, 500 W GaN RF Transistor
Product Overview
The Qorvo QPD1016 is a 500 W (P3dB) pre-matched discrete
GaN on SiC HEMT which operates from DC to 1.7 GHz and
50 V supply. The device is in an industry standard air cavity
package and is ideally suited for IFF, avionics, military and
civilian radar, and test instrumentation. The device can
support pulsed and linear operations.
Lead-free and ROHS compliant.
Evaluation boards are available upon request.
Functional Block Diagram
NI-780 Package
Key Features
 Frequency: DC to 1.7 GHz
 Output Power (P3dB)¹: 680 W
 Linear Gain¹: 23.9 dB
 Typical PAE3dB1: 77.4%
 Operating Voltage: 50 V
 CW and Pulse capable
Note 1: @ 1.3 GHz Load Pull
Applications
 IFF
 Avionics
 Military and civilian radar
 Test instrumentation
Ordering info
Part No.
ECCN
QPD1016
EAR99
QPD1016EVB01 EAR99
Description
DC – 1.7 GHz, 50 V, 500 W GaN RF
Transistor
1.2 – 1.4 GHz EVB
Datasheet Rev. A, December 16, 2016 | Subject to change without
notice
- 1 of 25 -
www.qorvo.com