TGA2612_15 Datasheet, PDF (10/12 Pages) TriQuint Semiconductor – 6 to 12 GHz GaN LNA

Mechanical Drawing & Bond Pad Description
TGA2612
6-12 GHz GaN LNA
2
1
3
4
Bond Pad
1
2
3
4
Unit: millimeters
Thickness: 0.10
Die x, y size tolerance: +/- 0.050
Chip edge to bond pad dimensions are shown to center of pad
Ground is backside of die
Symbol
RF In
VD
RF Out
VG
Pad Size
0.098 x 0.198
0.098 x 0.098
0.098 x 0.198
0.098 x 0.098
Description
Input; matched to 50 ohms
Drain voltage, VD. Bias network is required; see Application
Circuit on page 8 as an example.
Output; matched to 50 ohms
Gate voltage, VG. Bias network is required; see Application
Circuit on page 8 as an example.
Preliminary Datasheet: Rev - 01-29-15
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Disclaimer: Subject to change without notice
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