TGA2612_15 Datasheet, PDF (1/12 Pages) TriQuint Semiconductor – 6 to 12 GHz GaN LNA

Applications
 Commercial and Military Radar
 Communications
TGA2612
6-12 GHz GaN LNA
Product Features
 Frequency Range: 6–12GHz
 NF: < 1.8dB (1.5dB midband)
 P1dB: 20dBm
 OTOI: 29dBm
 Small Signal Gain: >22dB
 Return Loss: >7dB
 Bias: VD = 10V, IDQ = 100mA, VG = -2.3V Typical
 Chip Dimensions: 2.1 x 1.5 x 0.10mm
Performance features are typical across frequency, under
recommended bias and at 25°C carrier backside.
Functional Block Diagram
2
J1 ¹
RF In
3 _J2
RF Out
4
General Description
TriQuint’s TGA2612 is a broadband Low Noise
Amplifier fabricated on TriQuint’s production 0.25um
GaN on SiC process (TQGaN25). Covering 6–12GHz,
the TGA2612 typically provides P1dB of 20dBm,
greater than 22dB of small signal gain, 1.5dB noise
figure (mid-band) and 29dBm OTOI. In addition to the
high electrical performance, this GaN amplifier also
provides a high level of input power robustness. Able
to survive up to 2W of input power without performance
degradation, TriQuint’s TGA2612 provides flexibility
regarding receive chain protection resulting in lower
costs and reduced board space.
Pad Configuration
Pad No.
1
2
3
4
Symbol
RF In
VD
RF Out
VG
Fully matched to 50 ohms with integrated DC blocking
caps on both I/O ports, the TGA2612 is ideally suited
for both military and commercial radar and
communications applications.
Lead-free and RoHS compliant
Evaluation Boards are available upon request.
Ordering Information
Part
TGA2612
ECCN Description
EAR99 6 – 12 GHz GaN LNA
Preliminary Datasheet: Rev - 01-29-15
© 2014 TriQuint
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Disclaimer: Subject to change without notice
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