TQP7M9105_15 Datasheet, PDF (1/9 Pages) TriQuint Semiconductor – 1W High Linearity Amplifier

Applications
 Repeaters
 BTS Transceivers
 BTS High Power Amplifiers
 CDMA / WCDMA / LTE
 ISM Equipment
 General Purpose Wireless
Product Features
 50 – 1500 MHz
 +30 dBm P1dB at 940 MHz
 +47 dBm Output IP3 at 940 MHz
 19.5 dB Gain at 940 MHz
 +5 V Single Supply, 220 mA Current
 Internal RF Overdrive Protection
 Internal DC Overvoltage Protection
 On Chip ESD Protection
 SOT-89 Package
TQP7M9105
1W High Linearity Amplifier
3-pin SOT−89 Package
Functional Block Diagram
Backside Paddle - GND
1
RF IN
2
GND
3
RF OUT / V_CC
General Description
The TQP7M9105 is a high linearity, high gain 1 W driver
amplifier in industry standard, RoHS compliant, SOT-89
surface mount package. This InGaP / GaAs HBT delivers
high performance across 0.05 to 1.5 GHz while
achieving +47 dBm OIP3 and +30 dBm P1dB at
940 MHz while only consuming 220 mA quiescent
current. All devices are 100% RF and DC tested.
Pin Configuration
Pin No.
1
3
2
Backside Paddle
Label
RF IN
RF OUT / Vcc
GND
GND
The TQP7M9105 incorporates on-chip features that
differentiate it from other products in the market. The
amplifier has a dynamic active bias circuit that enable
stable operation over bias and temperature variations
and can provide a high linearity at back-off operation
The TQP7M9105 is targeted for use as a driver amplifier
in wireless infrastructure where high linearity, medium
power, and high efficiency are required. The device an
excellent candidate for transceiver line cards and high
power amplifiers in current and next generation multi-
carrier 3G / 4G base stations.
Ordering Information
Part No.
Description
TQP7M9105
1 W High Linearity Amplifier
TQP7M9105-PCB900 860 – 960 MHz tuned EVB
Standard T/R size = 1000 pieces on a 7” reel
Datasheet: Rev D 12-16-14
© 2014 TriQuint
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Disclaimer: Subject to change without notice
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