TC1304 Datasheet, PDF (6/6 Pages) Transcom, Inc. – Low Noise and Medium Power GaAs FETs

SCHEMATIC
Lg _Rg Cgd _Rid
Cgs
Id _Cds
Ris
Rs
Rd Ld
Rdb
Cbs
Ls
TC1304
REV5_20070502
TOM2 MODEL PARAMETERS
Parameters
VTO
-0.393 V
ALPHA 6.47
BETA 0.4622
GAMMA 0.0394
DELTA 0.3935
Q
0.78
NG
0.1
ND
0.01
TAU
4.255 ps
RG
1.2 Ohm
RD
1.29 Ohm
RS
1.594 Ohm
IS
1E-11 mA
N
1
VBI
1V
VDELTA
0.2 V
Parameters
VMAX
0.5 V
CGD
0.0754 pF
CGS
6.18 pF
CDS
0.1313 pF
RIS
2.2 Ohm
RID
0.001 Ohm
VBR
9V
RDB
120 Ohm
CBS
0.042 pF
TNOM
25 ℃
LS
0.01 nH
LG
0.041 nH
LD
0.04 nH
AFAC
1
NFING
1
CHIP HANDLING
DIE ATTACHMENT: Conductive epoxy or eutectic die attach is recommended. For eutectic die attach can be
accomplished with Au-Sn (80%Au-20%Sn) perform in State Temperature: 290℃ ± 5 ℃ ; Handling Tool :
Tweezers ; Time: less than 1min .
WIRE BONDING: The recommended wire bond method is thermo-compression bonding with 0.7 or 1.0 mil
(0.018 or 0.025mm) gold wire. Stage Temperature: 220°C to 250°C ; Bond Tip Temperature : 150℃ ; Bond Force:
20 to 30 gms depending on size of wire and Bond Tip Temperature.
HANDLING PRECAUTIONS: The user must operate in a clean, dry environment. Care should be exercised
during handling avoid damage to the devices. Electrostatic Discharge (ESD) precautions should be observed at all
stages of storage, handling, assembly, and testing. The static discharge must be less than 300V.
TRANSCOM, INC., 90 Dasoong 7^th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: [phone]
Fax: [phone]
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