TC1304 Datasheet, PDF (2/6 Pages) Transcom, Inc. – Low Noise and Medium Power GaAs FETs

TC1304
REV5_20070502
ABSOLUTE MAXIMUM RATINGS (T_A=25 °C) TYPICAL NOISE PARAMETERS (T_A=25 °C)
V_DS = 4 V, I_DS = 50 mA
Symbol
V_DS
Parameter
Drain-Source Voltage
Rating
7.0 V
Frequency NF_opt
(GHz) (dB)
G_A
(dB)
Γ_opt
MAG ANG
Rn/50
V_GS
Gate-Source Voltage
-3.0 V
2
0.32 20.5
0.86
13
0.26
I_DS
Drain Current
I_DSS
4
0.46 17.6
0.72
37
0.16
I_GS
Gate Current
600 µA
6
0.57 15.3
0.60
61
0.14
P_in
RF Input Power, CW
24 dBm
8
0.68 13.7
0.53
90
0.11
P_T
Continuous Dissipation
800 mW
10
0.88 12.7
0.48
117 0.08
T_CH
Channel Temperature
175 °C
12
0.90 11.9
0.47
145 0.05
T_STG
Storage Temperature
- 65 °C to +175 °C
14
1.04 11.4
0.48
170 0.03
16
1.14 10.5
0.49
-166 0.03
18
1.25
9.8
0.52
-148 0.06
CHIP DIMENSIONS
320 ^! 12
D
S GS
340 ^! 12
Units: Micrometers
Chip Thickness: 100
Gate Pad: 75 x 70
Drain Pad: 80 x 70
Source Pad: 75 x 80
TRANSCOM, INC., 90 Dasoong 7^th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: [phone]
Fax: [phone]
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