TC1201 Datasheet, PDF (6/6 Pages) Transcom, Inc. – Low Noise and Medium Power GaAs FETs

SCHEMATIC
Lg Rg Cgd Rid
Cgs
Id _Cds
Ris
Rs
Rd Ld
Rdb
Cbs
Ls
TC1201
REV5_20070502
TOM2 MODEL PARAMETERS
Parameters
Parameters
VTO
-0.757 V VMAX
ALPHA
3.92
CGD
BETA
0.161
CGS
GAMMA 0.0509
CDS
DELTA
0.3815
RIS
Q
0.987
RID
NG
0.1
VBR
ND
0.01
RDB
TAU
5.098 ps CBS
RG
2.205 Ohm TNOM
RD
0.898 Ohm LS
RS
1.631 Ohm LG
IS
1E-11 mA LD
N
1
AFAC
VBI
1 V NFING
VDELTA
0.2 V
0.5 V
0.032 pF
1.7929 pF
0.097 pF
7.121 Ohm
0.001 Ohm
9V
173.9 Ohm
0.0266 pF
25 °C
0.0005 nH
0.0278 nH
0.0243 nH
1
1
CHIP HANDLING
DIE ATTACHMENT: Conductive epoxy or eutectic die attach is recommended. Eutectic die attach can be
accomplished with Au-Sn (80%Au-20%Sn) perform at stage temperature: 290°C ± 5°C; Handling Tool: Tweezers;
Time: less than 1min.
WIRE BONDING: The recommended wire bond method is thermocompression bonding with 0.7 to 1.0 mil
(0.018 to 0.025 mm) gold wire. Stage temperature: 220°C to 250°C; Bond Tip Temperature: 150°C; Bond Force:
20 to 30 gms depending on size of wire and Bond Tip Temperature.
HANDLING PRECAUTIONS: The user must operate in a clean, dry environment. Care should be exercised
during handling avoid damage to the devices. Electrostatic Discharge (ESD) precautions should be observed at all
stages of storage, handling, assembly, and testing. The static discharge must be less than 300V.
TRANSCOM, INC., 90 Dasoong 7^th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: [phone]
Fax: [phone]
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