TC1201 Datasheet, PDF (2/6 Pages) Transcom, Inc. – Low Noise and Medium Power GaAs FETs

CHIP DIMENSIONS
430± 12
D
D
S
G
S
G
S
TC1201
REV5_20070502
250± 12
Units: Micrometers
Chip Thickness: 100
Gate Pad: 55 x 50
Drain Pad: 55 x 50
Source Pad: 55 x 65
TYPICAL SCATTERING PARAMETERS
6
8
.
0
0
.
1
.
0
4.0
S11
2.0
2 4 6 80
. . . ..
0 0 0 0 01
Swp Max
.0 ^18GHz
2
3.0
45.0.0
100.0
0 0 00 .
. . .. 0
2 3 45 1
-0.2
-0.4
6
.
0
-
8
.
0
-
0
.
1
-
0.01-
00..45--
0.3-
0
.
2-
Swp Min
2GHz
(T_A=25 °C)
V_DS = 4 V, I_DS = 25 mA
Mag Max
0.15
1
0
15
20
135
150
165
-180
-165
-150
-135 ₀
0.075
2
15
-
0
Per Div
1
-
0
9
5
Swp Max
7
0
6
18 GHz
45
30
15
0
-15
S12
-30
-45
-
6
-
-
7
0
Swp Min
95
0
2 GHz
TRANSCOM, INC., 90 Dasoong 7^th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: [phone]
Fax: [phone]
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