TC1101 Datasheet, PDF (5/5 Pages) List of Unclassifed Manufacturers – Low Noise and Medium Power GaAs FETs

SCHEMATI
Lg
Rg
Cgd
Cgs
Gm
Cds
Ri
T
Rs
Ls
Rd Ld
Rds
PARAMETERS
Lg
0.047 nH
Rg
1.460 Ohm
Cgs
0.207 pF
Ri
3.680 Ohm
Cgd
0.027 pF
Gm
54.80 mS
T
3.340 psec
TC1101
REV6_20070502
Rs
1.290 Ohm
Ls
0.001 nH
Cds
0.068 pF
Rds
321.5 Ohm
Rd
1.525 Ohm
Ld
0.038 nH
SMALL SIGNAL MODEL, V_DS = 6 V, I_DS = 25 mA
SCHEMATI
Lg
Rg
Cgd
Cgs
Gm
Cds
Ri
T
Rs
Ls
Rd Ld
Rds
PARAMETERS
Lg
0.047 nH
Rs
Rg
1.460 Ohm
Ls
Cgs
0.254 pF
Cds
Ri
5.910 Ohm
Rds
Cgd 0.019 pF
Rd
Gm
66.00 mS
Ld
T
3.640 psec
1.250 Ohm
0.001 nH
0.067 pF
377.8 Ohm
1.525 Ohm
0.038 nH
CHIP HANDLING
DIE ATTACHMENT: Conductive epoxy or eutectic die attach is recommended. Eutectic die attach can be
accomplished with Au-Sn (80%Au-20%Sn) perform at stage temperature: 290°C ± 5°C; Handling Tool: Tweezers;
Time: less than 1min.
WIRE BONDING: The recommended wire bond method is thermocompression bonding with 0.7 to 1.0 mil
(0.018 to 0.025 mm) gold wire. Stage temperature: 220°C to 250°C; Bond Tip Temperature: 150°C; Bond Force:
20 to 30 gms depending on size of wire and Bond Tip Temperature.
HANDLING PRECAUTIONS: The user must operate in a clean, dry environment. Care should be exercised
during handling avoid damage to the devices. Electrostatic Discharge (ESD) precautions should be observed at all
stages of storage, handling, assembly, and testing. The static discharge must be less than 300V.
TRANSCOM, INC., 90 Dasoong 7^th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: [phone]
Fax: [phone]
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