TC1101 Datasheet, PDF (1/5 Pages) List of Unclassifed Manufacturers – Low Noise and Medium Power GaAs FETs

TC1101
REV6_20070502
FEATURES
Low Noise and Medium Power GaAs FETs
Low Noise Figure: NF = 0.5 dB Typical at 12 GHz
PHOTO ENLARGEMENT
High Associated Gain: Ga = 12 dB Typical at 12 GHz
High Dynamic Range: 1 dB Compression Power P_-1 = 18.5 dBm at 12 GHz
Breakdown Voltage: BV_DGO ≥ 9 V
Lg = 0.25 µm, Wg = 160 µm
All-Gold Metallization for High Reliability
Tight Vp ranges control
High RF input power handling capability
100 % DC Tested
DESCRIPTION
The TC1101 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) chip, which has very low
noise figure, high associated gain and high dynamic range. The device can be used in circuits up to 30 GHz and
suitable for low noise and medium power amplifier applications including a wide range of commercial and
military applications. All devices are 100% DC tested to assure consistent quality. All bond pads are gold plated
for either thermo-compression or thermo-sonic wire bonding.
ELECTRICAL SPECIFICATIONS (T_A=25 °C)
Symbol
Conditions
MIN TYP MAX UNIT
NF Noise Figure at V_DS = 2 V, I_DS = 10 mA, f = 12GHz
0.5
0.7
dB
G_a Associated Gain at V_DS = 2 V, I_DS = 10 mA, f = 12GHz
10
12
dB
P_1dB Output Power at 1dB Gain Compression point, f = 12GHz V_DS = 6 V, I_DS = 25 mA
17.5 18.5
dBm
G_L Linear Power Gain, f = 12GHz V_DS = 6 V, I_DS = 25 mA
14
15
dB
I_DSS Saturated Drain-Source Current at V_DS = 2 V, V_GS = 0 V
48
mA
g_m Transconductance at V_DS = 2 V, V_GS = 0 V
55
mS
V_P Pinch-off Voltage at V_DS = 2 V, I_D = 0.32 mA
-1.0*
Volts
BV_DGO Drain-Gate Breakdown Voltage at I_DGO =0.08 mA
9
12
Volts
R_th Thermal Resistance
225
°C/W
Note: * For the tight control of the pinch-off voltage . TC1101’s are divided into 3 groups:
(1) TC1101P0710 : Vp = -0.7V to -1.0V (2) TC1101P0811 : Vp = -0.8V to -1.1V (3) TC1101P0912 : Vp = -0.9V to -1.2V
In addition, the customers may specify their requirements.
ABSOLUTE MAXIMUM RATINGS (T_A=25 °C) TYPICAL NOISE PARAMETERS (T_A=25 °C)
Symbol
V_DS
V_GS
I_DS
I_GS
P_in
P_T
T_CH
T_STG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Gate Current
RF Input Power, CW
Continuous Dissipation
Channel Temperature
Storage Temperature
Rating
7.0 V
-3.0 V
I_DSS
160 µA
18 dBm
250 mW
175 °C
- 65 °C to +175 °C
V_DS = 2 V, I_DS = 10 mA
Frequency NF_opt
(GHz) (dB)
G_A
(dB)
2
0.38 19.8
4
0.40 17.5
6
0.42 15.6
8
0.45 13.9
10
0.50 13.1
12
0.55 12.4
14
0.64 11.7
16
0.78 11.1
18
0.95 10.6
Γ_opt
MAG ANG
0.99
4
0.90
9
0.82
18
0.76
29
0.69
43
0.63
55
0.56
65
0.45
76
0.34
90
Rn/50
0.48
0.40
0.37
0.34
0.32
0.30
0.28
0.26
0.24
TRANSCOM, INC., 90 Dasoong 7^th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: [phone]
Fax: [phone]
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