TC3957 Datasheet, PDF (2/3 Pages) Transcom, Inc. – 1W Packaged Single-Bias PHEMT GaAs Power FETs

ABSOLUTE MAXIMUM RATINGS (T_A=25 °C)
Symbol
Parameter
Rating
V_DS
Drain-Source Voltage
12 V
P_in
RF Input Power, CW
26 dBm
P_T
Continuous Dissipation
3W
T_CH
Channel Temperature
175 °C
T_STG
Storage Temperature
- 65 °C to +175 °C
RECOMMANDED OPERATING CONDITION
Symbol
Parameter
Rating
V_DS
Drain to Source Voltage
8V
TC3957
REV2_20080516
HANDLING PRECAUTIONS:
The user must operate in a clean, dry environment.
Electrostatic Discharge (ESD) precautions should
be observed at all stages of storage, handling,
assembly, and testing. The static discharge must be
less than 300V.
TYPICAL SCATTERING PARAMETERS (T_A=25[)
Power Bias : V_DS = 8 V
Swp Max
9GHz
3.0
45..00
10.0
-0.2
-0.4
S11
Swp Min
2GHz
Mag Max
0.3
Swp Max
9 GHz
135
150
165
45
S12
30
15
0
-180
-165
-150
-135
-15
-30
-45
0.075
Per Div
Swp Min
2 GHz
Mag Max
8
135
150
165
-180
-165
-150
-135
2
Per Div
Swp Max
9 GHz
45
30
15
0
-15
-30
S21
-45
Swp Min
2 GHz
FREQUENCY
(GHz)
2³
3³
4³
5³
6³
7³
8³
9³
S11
MAG
ANG
0.8771 ³ -169.70 ³
0.8138 ³ 161.54 ³
0.7667 ³ 139.73 ³
0.7226 ³ 119.09 ³
0.6779 ³ 97.92 ³
0.6332 ³ 73.98 ³
0.5922 ³ 45.49 ³
0.5628 ³ 9.60 ³
S21
MAG
ANG
4.7327 ³
63.74 ³
3.3265 ³
32.43 ³
2.6305 ³
5.72 ³
2.2550 ³ -19.69 ³
2.0514 ³ -45.40 ³
1.9521 ³ -73.02 ³
1.9171 ³ -103.41 ³
1.9021 ³ -136.54 ³
Swp Max
9GHz
3.0
45..00
10.0
-0.2
-0.4
S22
Swp Min
2GHz
S12
MAG
ANG
0.0502 ³ -12.55 ³
0.0506 ³ -11.65 ³
0.0619 ³ -14.13 ³
0.0769 ³ -23.02 ³
0.0979 ³ -36.57 ³
0.1221 ³ -54.71 ³
0.1545 ³ -78.11 ³
0.1909 ³ -105.36 ³
S22
MAG
ANG
0.3727 ³ -162.37 ³
0.3511 ³ -177.70 ³
0.3464 ³ 172.54 ³
0.3433 ³ 163.24 ³
0.3409 ³ 153.98 ³
0.3298 ³ 142.20 ³
0.3119 ³ 126.20 ³
0.2676 ³ 102.60 ³
TRANSCOM, INC., 90 Dasoong 7^th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: [phone]
Fax: [phone]
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