TC3957 Datasheet, PDF (1/3 Pages) Transcom, Inc. – 1W Packaged Single-Bias PHEMT GaAs Power FETs

TC3957
REV2_20080516
1W Packaged Single-Bias PHEMT GaAs Power FETs
FEATURES
• 1W Typical Output Power at 6GHz
• 10dB Typical Linear Power Gain at 6GHz
• High Linearity: IP3 = 40 dBm Typical at 6GHz
• High Power Added Efficiency:
Nominal PAE of 35% at 6GHz
• Breakdown Voltage: BV_DGO ≥ 15V
• Lg = 0.35 µm, Wg = 2.4 mm
• 100 % DC Tested
• Suitable for High Reliability Application
• Lost Cost Ceramic Package
PHOTO ENLARGEMENT
DESCRIPTION
The TC3957 is a self-bias Cu-based ceramic packaged device with TC1501N PHEMT GaAs FETs, which is designed
to provide the single power supply application. The Cu-based ceramic package provides excellent thermal
conductivity for the GaAs FET. The devices only need to provide the positive voltage to drain and ground the source,
which is suitable for oscillator, power amplifier application in a wide range of commercial application. All devices are
100% DC tested to assure consistent quality.
ELECTRICAL SPECIFICATIONS (T_A=25[)
Symbol
CONDITIONS
MIN
P_1dB Output Power at 1dB Gain Compression Point, f = 6GHz V_DS = 8 V
29
G_L Linear Power Gain, f = 6GHz V_DS = 8 V
IP3 Intercept Point of the 3^rd-order Intermodulation, f = 6GHz V_DS = 8 V, *P_SCL = 17 dBm
PAE Power Added Efficiency at 1dB Compression Power, f = 6GHz
I_DS Drain-Source Current at V_DS = 8 V
BV_DGO Drain-Gate Breakdown Voltage at I_DGO = 1.2mA
15
R_th Thermal Resistance
Note: *P_SCL: Output Power of Single Carrier Level.
TYP
30
10
40
35
300
18
16
MAX UNIT
dBm
dB
dBm
%
mA
Volts
°C/W
TRANSCOM, INC., 90 Dasoong 7^th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: [phone]
Fax: [phone]
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