TC2998E Datasheet, PDF (2/2 Pages) Transcom, Inc. – 2.5-2.7GHz 20W Packaged GaAs Power FETs

TC2998E
PRE.3_01/21/2008
ABSOLUTE MAXIMUM RATINGS at 25 C
Symbol
Parameter
Rating
V_DS
Drain-Source Voltage
12 V
V_GS
Gate-Source Voltage
-5 V
I_DS
Drain Current
I_DSS
P_in
RF Input Power, CW
37dBm
P_T
Continuous Dissipation
150 W
T_CH
Channel Temperature
175 C
T_STG
Storage Temperature
- 65 C to +175 C
HANDLING PRECAUTIONS:
The user must operate in a clean, dry environment.
Electrostatic Discharge (ESD) precautions should
be observed at all stages of storage, handling,
assembly, and testing. The static discharge must be
less than 300V
MECHANICAL OUTLINE
Gate
Source
DDrarianin
Note – Mechanical outline might be adjusted upon actual design..
TRANSCOM, INC., 90 Dasoong 7^th Road, Tainan Science-Based Industrial Park, Shanhua Jen, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: [phone]
Fax: [phone]
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