TC2998E Datasheet, PDF (1/2 Pages) Transcom, Inc. – 2.5-2.7GHz 20W Packaged GaAs Power FETs

- Preliminary Datasheet -
TC2998E
PRE.1_01/21/2008
2.5-2.7GHz 20W Packaged GaAs Power FETs
FEATURES
 20 W Typical Power
 10.5 dB Typical Linear Power Gain
 High Linearity:
IP3 = 52 dBm Typical
 High Power Added Efficiency:
Nominal PAE of 37 %
 100 % DC and RF Tested
DESCRIPTION
The TC2998E is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor.
The ceramic package provides the best thermal conductivity for the GaAs FET. All devices are 100% DC
and RF tested to assure consistent quality. Typical applications include high dynamic range power amplifier
for military or commercial applications.
ELECTRICAL SPECIFICATIONS
Symbol
CONDITIONS
MIN
FREQ Operating Frequency
2.5
P_1dB
Output Power at 1dB Gain Compression Point,
Vd = 10V, Id = 4.5A, f=2.5 – 2.7GHz
42
G_L
Linear Power Gain
Vd = 10V, Id = 4.5A, f=2.5 – 2.7GHz
9.5
IP3
Intercept Point of the 3^rd-order Intermodulation, Vd = 10V, Id = 4.5A, f=2.5 – 2.7GHz,
*PSCL = 31 dBm
PAE Power Added Efficiency at 1dB Compression Power
I_DSS Saturated Drain-Source Current at V_DS = 2 V, V_GS = 0 V
g_m
Transconductance at V_DS = 2 V, V_GS = 0 V
V_P
Pinch-off Voltage at V_DS = 2 V, I_D = 60 mA
BV_DGO Drain-Gate Breakdown Voltage at I_DGO =15 mA
20
R_th Thermal Resistance
* P_SCL: Output Power of Single Carrier Level, delta frequency=5MHz.
TYP
43
10.5
52
37
18.75
13500
-1.7
22
0.6
MAX
2.7
UNIT
GHz
dBm
dB
dBm
%
A
mS
Volts
Volts
C/W
TRANSCOM, INC., 90 Dasoong 7^th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: [phone]
Fax: [phone]
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