TC2996B Datasheet, PDF (2/3 Pages) Transcom, Inc. – 1.9 GHz 12 W Flange Ceramic Packaged GaAs Power FETs

ABSOLUTE MAXIMUM RATINGS at 25 °C
Symbol
Parameter
Rating
V_DS
Drain-Source Voltage
12 V
V_GS
Gate-Source Voltage
-5 V
I_DS
Drain Current
I_DSS
P_in
RF Input Power, CW
35dBm
P_T
Continuous Dissipation
60 W
T_CH
Channel Temperature
175 °C
T_STG
Storage Temperature
- 65 °C to +175 °C
HANDLING PRECAUTIONS:
TC2996B
REV1_20070503
The user must operate in a clean, dry environment.
Electrostatic Discharge (ESD) precautions should be
observed at all stages of storage, handling, assembly, and
testing. The static discharge must be less than 300V.
FLANGE PACKAGE OUTLINE (in mm)
Gate
Source
Drain
Source
TYPICAL COMMON SOURCE SCATTERING PARAMETERS (V_D = 10 V, I_D = 2.5 A)
FREQUENCY
(GHz)
1
2
3
4
5
6
S11
MAG
0.98594
0.93861
0.99773
0.99921
0.99931
0.99920
ANG
174.59
172.82
165.13
158.57
151.93
144.83
S21
MAG
ANG
0.99195 49.618
0.89877 -68.601
0.09707 -125.68
0.02972 -135.99
0.01351 -141.86
0.00762 -146.81
S12
MAG
ANG
0.006454
-28.741
0.010435
-127.32
0.001768
-156.24
0.000940
-144.13
0.000717
-137.94
0.000618
-136.73
S22
MAG
ANG
0.71594 -163.61
0.98480 -172.81
0.94714 179.61
0.96184 175.04
0.97169 170.70
0.97762 166.59
TRANSCOM, INC., 90 Dasoong 7^th Road, Tainan Science-Based Industrial Park, Shanhua Jen, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: [phone]
Fax: [phone]
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